A research team has developed high-performance diamond/ε-Ga 2 O 3 heterojunction pn diodes based on ultrawide bandgap semiconductors, achieving breakdown voltages exceeding 3 kV. This work was ...
We develop a pn junction solar cell using semiconducting BaSi2, which is composed of abundant chemical elements of Si and Ba. Energy conversion efficiencies exceeding 25% will be expected for only a ...
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