Engineeringness on MSN

The Tiny Switch That Runs Every Computer and Gadget

Nearly every piece of technology you use—from smartphones to computers—relies on one revolutionary component: the transistor.
EurekAlert!

First 2D semiconductor FPGA achieves wafer-scale integration

Researchers at Fudan University have achieved a breakthrough by fabricating the first Field-Programmable Gate Array (FPGA) ...
Compound Semiconductor

2D MoS₂ FPGA integrates 4000 FETs

Now a Chinese team, led by Peng Zhou and Wenzhong Bao at Fudan University, has developed a top-gate (TG) 2D ...
Tech Xplore on MSN

Rubber electronics are first to offer complementary metal–oxide–semiconductor functionality

Researcher Cunjiang Yu and his research team, including several of his former students, have announced a significant ...

The problem with AI ‘vibe coding’

AI has empowered anyone to code, but, as with many technical matters, not actually understanding the fundamentals comes with ...
AZoNano on MSN

2D Material Transistors Make Flexible Electronics Cleaner and Cheaper

The new fabrication technique for all-2D transistors on flexible substrates offers a sustainable alternative, boosting ...
Semiconductor Engineering

PCIe Low-Power Validation Challenges And Potential Solutions

PCIe PHY defines the PIPE states that represent power and operational modes that control link’s electrical activity ranging ...

Electrical and Electronic Engineering: Which One is Right for You?

Confused about your engineering future? Learn the core differences between Electrical (power systems) and Electronic (micro-chips) engineering to find your perfect career path.
Semiconductor Engineering

Free-Space Gated Transistor In Wide Bandgap And Ultra Wide Bandgap Semiconductors (KAUST Et Al.)

A new technical paper titled “Lateral Semiconductor–Free-Space Gate Transistors” was published by researchers at KAUST and ...
IEEE

SRAM With Oxide Semiconductor Pull-Down Transistors on the Backside Enabling Full-Node PPA Improvement

Abstract: The 6T SRAM bitcell, consisting of four pFETs on the same tier and two oxide-semiconductor pull-down transistors stacked on the backside, can achieve 17% power reduction, 32% performance ...