This coupling heavily influences performance and yield. Heat induces mechanical deformation, deformation alters carrier ...
Abstract: A polarization-based p-channel GaN insulated gate bipolar transistor (PB P-IGBT) is proposed and validated through calibrated TCAD simulation. The emitter and collector regions of the ...
Abstract: This article proposes a hybrid spin-complementary metal–oxide–semiconductor (CMOS) logic design based on cascadable spin-torque majority gate (STMG), which allows the implementation of ...
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